爱普生晶振TG-5510CA，是一种高稳定性的TCXO晶振，支持CMOS或限幅正弦输出，小体积晶振尺寸7.0x5.0mm，10脚贴片晶振，有源晶振，电源电压3.3V，频率范围提供10MHz至54MHz，具有高稳定性温补晶振，小体积轻薄型，低抖动，低功耗，低损耗，低耗能，低电源电压，低相位噪声，耐高温，高稳定性等特点，工作温度范围-40℃至+85℃，TG-5510CA贴片晶振通常都是应用到工业，汽车，通信和网络等大型高端设备身上的，为5G基站用晶振而开发。可以广泛应用到5G基站，微波，网络同步，BTS等方面。
有源晶振X1G006001009514适用于5G基站应用
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石英晶体振荡器
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  型号
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  频率
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  尺寸
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  输出波
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  电源
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  精度
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  工作温度
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X1G006001004114
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TG-5510CA
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10.000000MHz
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7.00x5.00x1.50mm
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CMOS
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3.135 to 3.465 V
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+/-1.0 ppm
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-40 to +105 °C
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X1G006001004214
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TG-5510CA
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19.200000MHz
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7.00x5.00x1.50mm
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CMOS
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3.135 to 3.465 V
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+/-1.0 ppm
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-40 to +105 °C
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X1G006001004314
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TG-5510CA
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20.000000MHz
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7.00x5.00x1.50mm
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CMOS
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3.135 to 3.465 V
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+/-1.0 ppm
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-40 to +105 °C
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X1G006001004414
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TG-5510CA
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24.576000MHz
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7.00x5.00x1.50mm
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CMOS
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3.135 to 3.465 V
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+/-1.0 ppm
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-40 to +105 °C
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X1G006001004514
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TG-5510CA
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25.000000MHz
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7.00x5.00x1.50mm
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CMOS
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3.135 to 3.465 V
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+/-1.0 ppm
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-40 to +105 °C
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X1G006001004614
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TG-5510CA
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38.880000MHz
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7.00x5.00x1.50mm
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CMOS
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3.135 to 3.465 V
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+/-1.0 ppm
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-40 to +105 °C
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X1G006001004714
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TG-5510CA
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40.000000MHz
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7.00x5.00x1.50mm
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CMOS
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3.135 to 3.465 V
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+/-1.0 ppm
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-40 to +105 °C
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X1G006001004814
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TG-5510CA
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50.000000MHz
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7.00x5.00x1.50mm
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CMOS
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3.135 to 3.465 V
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+/-1.0 ppm
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-40 to +105 °C
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X1G006001007614
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TG-5510CA
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30.720000MHz
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7.00x5.00x1.50mm
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CMOS
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3.135 to 3.465 V
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+/-1.0 ppm
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-40 to ++85 °C
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X1G006001007714
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TG-5510CA
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24.576000MHz
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7.00x5.00x1.50mm
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CMOS
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3.135 to 3.465 V
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+/-1.0 ppm
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-40 to ++85 °C
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X1G006001007814
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TG-5510CA
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49.152000MHz
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7.00x5.00x1.50mm
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CMOS
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3.135 to 3.465 V
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+/-1.0 ppm
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-40 to ++85 °C
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X1G006001007914
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TG-5510CA
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24.000000MHz
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7.00x5.00x1.50mm
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Clipped sine wave
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3.135 to 3.465 V
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+/-1.0 ppm
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-40 to +85 °C
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X1G006001008014
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TG-5510CA
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48.000000MHz
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7.00x5.00x1.50mm
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Clipped sine wave
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3.135 to 3.465 V
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+/-1.0 ppm
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-40 to +85 °C
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X1G006001008114
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TG-5510CA
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19.200000MHz
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7.00x5.00x1.50mm
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CMOS
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3.135 to 3.465 V
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+/-1.0 ppm
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-40 to ++85 °C
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X1G006001008214
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TG-5510CA
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38.400000MHz
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7.00x5.00x1.50mm
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CMOS
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3.135 to 3.465 V
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+/-1.0 ppm
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-40 to ++85 °C
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X1G006001008314
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TG-5510CA
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27.000000MHz
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7.00x5.00x1.50mm
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CMOS
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3.135 to 3.465 V
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+/-1.0 ppm
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-40 to +85 °C
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X1G006001009014
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TG-5510CA
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25.000000MHz
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7.00x5.00x1.50mm
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CMOS
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3.135 to 3.465 V
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+/-1.0 ppm
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-40 to ++85 °C
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X1G006001009114
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TG-5510CA
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19.440000MHz
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7.00x5.00x1.50mm
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CMOS
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3.135 to 3.465 V
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+/-1.0 ppm
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-40 to ++85 °C
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X1G006001009214
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TG-5510CA
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25.600000MHz
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7.00x5.00x1.50mm
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CMOS
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3.135 to 3.465 V
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+/-1.0 ppm
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-40 to ++85 °C
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X1G006001009314
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TG-5510CA
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40.000000MHz
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7.00x5.00x1.50mm
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CMOS
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3.135 to 3.465 V
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+/-1.0 ppm
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-40 to ++85 °C
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X1G006001009414
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TG-5510CA
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12.800000MHz
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7.00x5.00x1.50mm
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CMOS
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3.135 to 3.465 V
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+/-1.0 ppm
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-40 to ++85 °C
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X1G006001009514
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TG-5510CA
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20.000000MHz
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7.00x5.00x1.50mm
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CMOS
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3.135 to 3.465 V
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+/-1.0 ppm
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-40 to ++85 °C
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X1G006001009614
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TG-5510CA
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38.880000MHz
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7.00x5.00x1.50mm
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CMOS
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3.135 to 3.465 V
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+/-1.0 ppm
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-40 to ++85 °C
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X1G006001009714
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TG-5510CA
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50.000000MHz
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7.00x5.00x1.50mm
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CMOS
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3.135 to 3.465 V
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+/-1.0 ppm
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-40 to ++85 °C
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X1G006001009814
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TG-5510CA
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10.000000MHz
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7.00x5.00x1.50mm
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CMOS
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3.135 to 3.465 V
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+/-1.0 ppm
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-40 to ++85 °C
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有源晶振X1G006001009514适用于5G基站应用
温补晶振即温度补偿晶体振荡器（TCXO），是通过附加的温度补偿电路使由周围温度变化产生的振荡频率变化量削减的一种石英晶体振荡器。
削波正玄波(Clipped Sine Wave)是有源晶振输出方式的一种,相比方波的谐波分量少很多,但驱动能力较弱,在负载10K/10PF时Vp-p为0.8Vmin.通常为SMD7050,SMD5032,SMD3225等封装的表贴温补晶振使用的输出波形.当然,有源晶振还有CMOS,TTL,ECL,LVDS,正玄波等输出方式,这些输出逻辑方式也各有优缺点,至于如何利用它们我们却是不得而知.所以日本爱普生晶振就推出了相关的技术支持文档,明确指出应当如何在电路设计中应用削波正玄波.
